Publications

Dissemination

 

06/2024: Reliability and Failure Mechanisms of Direct Bonded Power Semiconductor Devices in Power Cycling Test

  • Author(s): M. Köhler(1); M. Curkin(1); J. Müller(2); C. Thomas(1); K.-G. Besendörfer(2); N. Heuck(1)
  • Partner: HSHL(1), Semikron(2)
  • Published: 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

 

06/2024: Digital twin-based lifetime estimation of SiC power modules

  • Author(s): Anu Mathew(1,2), Jan Albrecht(2), Sven Rzepka(2), Patrick Heimler(1), Dong Xie(1), Mohamed Alaluss(1), Thomas Basler(1)
  • Partner: TUC(1), IISB(2)
  • Published: 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

 

06/2024: ML-basiertes Auslegungstool für Leistungselektronikkühler auf Basis von CFD-Simulationsdaten

  • Author(s): Arnulf Sehlinger, Dominik Plein, Hendrik Plooij, Sebastian Spring
  • Partner: TPlus
  • Published: NAFEMS Magazin

 

06/2024: Radiation Hardness of SiC based Inverters based on an EV Mis-sion Profile

  • Author(s): Hadiuzzaman Syed, Stephan Schwaiger, Sudhanshu Goel, Alberto Martinez-Limia, Klaus Heyers
  • Partner: Bosch
  • Published: PCIM Europe 2024

 

06/2024: Influence of Transfer Molding on the Reliability of DCM SiC Power Modules

  • Author(s): Jacek Rudzki(1), Henning Ströbel-Maier(1), Martin Becker(1), Patrick Heimler(2), Dong Xie(2), Mohamed Alaluss(2), Thomas Basler(2), Anu Mathew(2)(3), Sven Rzepka(3)
  • Partner: (1)Semikron Danfoss; (2)TUC; (3)IISB
  • Published: PCIM Europe 2024

 

06/2024: SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

  • Author(s): Eric Guiot(1), Frédéric Allibert(1), Jürgen Leib(2), Tom Becker(2), Oleg Rusch(2), Alexis Drouin(1),Walter Schwarzenbach(1)
  • Partner: (1)Soitec; (2)IISB
  • Published: PCIM Europe 2024

 

04/2024: Cost-effective SiC Substrate Manufacturing for Power Devices Enabled by Oxide-free Wafer Bonding

  • Author(s): Dr. Bernd Dielacher (presenter), Péter Kerepesi
  • Partner: EV GROUP E. THALLNER GMBH
  • Published: Presentation at the PE International 2024 conference in Brussels (April 17-18)

 

12/2023: Investigation of Two-Stage Ag-Sintering Processes for the Die Attach of Power Devices

  • Author(s): Dominik Sumkötter, Mario Wollschläger, Marius Köhler, Marcel Lawniczak, Johannes Weickmann, Kurt-Georg Besendörfer, Nicolas Heuck
  • Partner: HSHL, SEMI
  • Published: 25th IEEE Electronics Packaging Technology Conference (EPTC 2023)
  • DOI: 10.1109/EPTC59621.2023.10457720

 

09/2023: Dynamic Flux Balance Control of a Phase-shifted Full Bridge

  • Author(s): Jan Martiš, Pavel Vorel, Radek Tománek
  • Partner: Brno University of Technology (BUT)
  • Published: 36th International Conference on Electrical Drives and Power Electronics (EDPE 2023)

 

06/2023: Single-stage three-phase AC/DC PFC resonant converter with galvanic isolation using an integrated transformer

  • Author(s): Jan Martiš, Pavel Vorel
  • Partner: Brno University of Technology (BUT)
  • Informative lecture at Brno University of Technology

 

05/2023: Effect of Chip Metallization and Process Parameters on the Die Attach Properties of Direct Bonded Power Devices

  • Author(s): M. Curkin, M. Köhler, S. Kraft, J. Müller, K.-G. Besendörfer, N. Heuck
  • Partner: SEMI, HSHL
  • Published: 2023 IEEE 73th Electronic Components and Technology Conference (ECTC23)
  • DOI: 10.1109/ECTC51909.2023.00286

 

11/2022: Wissensbasis zur Förderung von Innovationen Smarter PSS innerhalb eines Wertschöpfungsnetzwerkes

  • Author(s): D. Mollahassani, T. Eickhoff, A. Eiden, J.C. Göbel
  • Partner: TU Kaiserslautern
  • Published: Tag des Systems Engineering 2022

 

09/2022:Tailored Polycrystalline Substrate for SmartSiCTM Substrates Enabling High Performance Power Devices

  • Author(s): H. Biard, S. Odoul, W. Schwarzenbach, I. Radu, C. Maleville, A. Potier, M. Ferrato, E. Guajioty
  • Partner: Soitec SA, Mersen
  • Published: 19th International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM22)
  • https://doi.org/10.4028/p-65127n

 

09/2022: Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device through the Use of SmartSiCTM Substrate

  • Author(s): E. Guiot, F. Allibert, J. Leib, T. Becker, W. Schwarzenbach, T. Erlbacher, S. Rouchier
  • Partner: Soitec SA, Fraunhofer IISB
  • Published: 19th International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM22)
  • DOI: 10.4028/p-777hqg

 

09/2022: High Sensitivity Surface Defect Inspection of SiC and SmartSiCTM Substrates Using a DUV Laser-Based System

  • Author(s): E. Cela, S. Shahidi , P. Parangi , R. Shrestha, G. Simpson, J. Widiez, N. Daval, A. Chapelle, S. Rouchier, W. Schwarzenbach
  • Partner: Soitec SA, CEA-LETI
  • Published: 19th International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM22)
  • https://doi.org/10.4028/p-4918s1

 

09/2022: Benchmarking Experiment of Substrate Quality including SmartSiCTM Wafers by Epitaxy in a Batch Reactor

  • Author(s): B. Kallinger, P. Hens, P. Berwian, C. Kranert, K.M. Albrecht, J. Erlekampf
  • Partner: Fraunhofer IISB, AIXTRON SE
  • Published: 19th International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM22)
  • DOI: 10.4028/p-av6tdz

 

09/2022: Engineered SiC materials for power technologies

  • Author(s): W. Schwarzenbach, S. Rouchier, G. Berre, R. Boulet, O. Ledoux, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Biard, K. Alassaad, L. Viravaux, N. Ben Mohamed, D. Radisson, G. Picun, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, K. Abadie, E. Rolland, F. Fournel, G. Gélineau, F. Mazen, A. Moulin, C. Moulin, D. Delprat, N. Daval, S. Odoul, P. Sandri and C. Maleville
  • Partner: Soitec, CEA
  • Published: International Conference on IC Design and Technology 2022 (ICICDT22)
  • https://ieeexplore.ieee.org/document/9933092

 

09/2022: Evaluation of crystal quality and dopant activation of Smart Cut™-transferred 4H-SiC thin film

  • Author(s): G. Gelineau, J. Widiez, E.Rolland, K.Vladimirova, A. Moulin, V. Prudkovskiy, N.Troutot, P. Gergaud, D. Mariolle,
    S. Barbet, V. Amalbert, G. Lapertot, K. Mony, S. Rouchier, R. Boulet, G. Berre, W. Schwarzenbach, Y. Bogumilowicz
  • Partner: CEA, Soitec
  • Published: 19th International Conference on Silicon Carbide and Related Materials (ICSCRM2022)
  • https://doi.org/10.4028/p-026sj4

 

09/2022: Evaluation of crystal quality and dopant activation of Smart Cut™-transferred 4H-SiC thin film

  • Author(s): G. Gelineau, J. Widiez, E.Rolland, K.Vladimirova, A. Moulin, V. Prudkovskiy, N.Troutot, P. Gergaud, D. Mariolle,
    S. Barbet, V. Amalbert, G. Lapertot, K. Mony, S. Rouchier, R. Boulet, G. Berre, W. Schwarzenbach, Y. Bogumilowicz
  • Partner: CEA, Soitec
  • Published: scientific poster at 19th International Conference on Silicon Carbide and Related Materials (ICSCRM2022)
  • TRANSFORM_Poster ICSCRM2022_CEA_Soitec.pdf

 

09/2022: Impact of aluminum casing on high-frequency transformer leakage inductance and AC resistance

  • Author(s): Reda Bakri, Wendell Da Cunha Alves, Xavier Cimetiere, Frédéric Gillon, Antoine Bruyere, Lucian Vatamanu
  • Partner: Université de Lille, L2EP, Valeo Siemens eAutomotive France
  • Published: 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)
  • https://ieeexplore.ieee.org/document/9907445

 

08/2022: Advanced Local Grid Control System for Offshore Wind Turbines with the Diode-Based Rectifier HVDC Link Implemented in a True Scalable Test Bench

  • Author(s): D. Herrera, T. Tricarico, D. Oliveira, M. Aredes, E. Galván-Díez, J. M. Carrasco
  • Partner:: USE
  • Published: Energies, 11 August 2022
  • https://doi.org/10.3390/en15165826

 

05/2022 New Die Attach Materials: Silver and Silver/ Copper sintering pastes

 

04/2022: The Mobility Scenario vs Green Deal Objectives

  • Author(s): Antonio Imbruglia, Francesco Gennaro, Pietro Di Grazia
  • Partner: STMicroelectronics, Italy
  • Published: Smart System Integration 2022 (26-28.04.2022 in Grenoble)
  • TRANSFORM_Paper SSI2022_ST-IT.pdf

 

03/2022 SmartSiC TM for Manufacturing of SiC Power devices

 

03/2022: Supporting Collaborative Innovation Processes in Smart Product Value Creation Networks

 

03/2022: Optimization-Based Capacitor Balancing Method with Customizable Switching Reduction for CHB Converters

  • Author(s): Luis Galván, Pablo Jesús Gómez, Eduardo Galván, Juan Manuel Carrasco
  • Partner: University of Seville (USE)
  • Published: Energies 2022, 15(6), 1976
  • https://www.mdpi.com/1996-1073/15/6/1976

 

12/2021: Optimization-Based Capacitor Balancing Method with Selective DC Current Ripple Reduction for CHB Converters

  • Author(s): Luis Galván, Pablo Jesús Gómez, Eduardo Galván, Juan Manuel Carrasco
  • Partner: University of Seville (USE)
  • Published: Energies 2022 15(1), 243
  • https://www.mdpi.com/1996-1073/15/1/243

 

10/2021: 150mm SiC engineered substrates for high-voltage power devices