Project Consortium

Partner roles


Robert Bosch GmbH (DE): Projectcoordination, power device and process development, ASIC development, Cu-based assembly and interconnetion technology, adaption of gate driver, power module and reliability evaluation, use case „Traction inverter for electrical vehicles“

Semikron Elektronik GmbH & Co KG (DE): Power module development, high density packaging, reliability evaluation, power module development for use cases different use cases in project.

Fraunhofer IISB (DE): Pathfinding 200 mm Wafer technology: Co-development of 200mm epi and annealing processes.

TU Chemnitz (DE): Development and alignment of reliability test methods for SiC MOSFETs, unified lifetime models, development of digital twins.

Aixtron SE (DE): Development, optimization and test of CVD system for 150/200 mm SiC epitaxial growth.

Centrotherm International AG (DE): Annealing equipment and tools for semiconductor processing, pathfinding 200 mm Wafer technology.

Forschungs- und Entwicklungszentrum Fachhochschule Kiel GmbH (DE): Process development for bonding and joining of SiC chips in power modules, new power module concepts based on die-on-leadframe technology

Danfoss Silicon Power GmbH (DE): New packaging and interconnection technologies for power modules, adaption of gate driver.

Hochschule Hamm-Lippstadt (DE): Interconnection technologies for cost efficient manufacturing of new power module designs.

Technische Universität Kaiserslautern (DE): Analysis and enhancement of methods of Model-based Systems Engineering (MBSE) in the development cycle and development of a cross-domain value chain system and component meta-model by the Institute of Virtual Product Engineering (VPE).

Lasertec Inc. Zweigniederlassung (USA / DE): Defect inspection of SiC substrates.

SURAGUS GmbH (DE): Resistivity measurements of substrates and devices, in-line measurements for device processing.

Saint-Gobain Industrie Keramik Roedental GmbH (DE): Development of low resistivity polycristalline SiC substrate by powder processing compatible with Smart-Cut™ technology.

Nano-Join GmbH (DE): Develop and provide sintering pastes for die-attach of SiC dies onto substrates.

Tplus Engineering GmbH (DE): Methods and workflows for simulation-based optimization, data-driven design tools based on machine learning and methodologies for assessing manufacturing deviations by simulation, multi-objective optimizations.

ISLE Steuerungstechnik und Leistungselektronik GmbH (DE): Development, optimization and specification of test methods for SiC-MOSFETs.


SOITEC SA (FR): Design, development, qualification and fabrication of SiC substrates in a dedicated pilot line based on Smart-Cut™ technology.

CEA (FR): Develop technological building blocks for the production of SiC substrates based on Smart-Cut™ technology on a pilot line, lead pathfinding to 200 mm Wafer production line.

Valeo Siemens Automotive SAS (FR): Development of a new topology for bi-directional charger (use case).

NoVaSiC SA (FR): PVT (Physical Vapor Transport) SiC bulk wafer technology (polycrystalline, monocrystalline), pathfinding 200 mm Wafer technology.

Saint-Gobain Centre des Recherches et d’Etudes Europeen (FR): Development of low resistivity polycristalline SiC substrate by powder process compatible with Smart-Cut™ technology.

Mersen France Gennevilliers SAS (FR): Development of a polycrystalline SiC substrate obtained by CVD compatible with Smart-Cut™ technology.

Central Lille Institute (FR): Grid-forming control applied to the use case of “bi-directional battery charger”.

SOITEC LAB (FR): Fabrication of the Smart-Cut™ SiC engineered substrate in the pilot line.


ST Microelectronics SRL (IT): Power device and process development, backend assembly and packaging, power module development.

High Performance Engineering (IT): Use-case demonstrator the use case “Heavy Machinery for Agriculture” (smart farm tractors).

Consorzio Nationale Interuniversitario per la Nanoelectronica (IT): Electrical characterization and TCAD modelling of the SiC-based power device reliability and performance, specifications of the converter for the use case “SiC DC/DC converter in agriculture machineries for precision farming application”.


STMicroelectronics Silicon Carbide AB (SE): SiC material provider for the Smart-Cut™ process .

Linköping University (SE): Material characterization bulk SiC substrates and characterization of defects in epitaxial layers.


EV Group E.Thallner GmbH (AT): Development of a combinded layer deposition and bonding equipment and processes enabling highly conductive SiC bonds for the Smart-Cut™ Technology.

   Czech Republic

Institut Mikroelektronickych Aplikaci S.R.O. (CZ): Remote management of the converter in use case „Industrial single-stage three-phase power converter”.

BRNO University of Technology (CZ): Low inductive interfaces between the DC link capacitors and power converter, integration of power modules into the converter for the use case “Industrial single-stage three-phase power converter”.


Universidad de Sevilla (ES): Development of a high voltage DC/DC power converter for the use case “photovoltaic string optimization”, reliability of SiC MOSFETs.

Premo S.A.U. (ES): Design and development of high efficiency magnetic components (Transformer, chokes, etc.) and thermally conductive compounds with special high electrical isolation degree for the defined use cases.