Technical Objectives:

  1. Develop transformative substrate technology from TRL3 to pilot line
  2. Develop production type equipment for SiC technology
  3. Qualify the new substrate technology at device and system level, preparing for industrial ramp-up
  4. Develop planarMOS and trenchMOS technologies with strongly enhanced performance, capable to use the new substrate technology
  5. Develop assembly and interconnect technologies for SiC, optimizing performance, reliability, cost by physical investigation and digital twins.
  6. Optimize design and architecture for SiC based power electronic systems to increase energy efficiency and reduce the total cost of ownership (TCO) for most relevant application domains
  7. Prove pervasive applicability of European silicon carbide technology in demonstrators for a different application domains.